Conference paper
Leakage aware Si/SiGe CMOS FinFET for low power applications
G. Tsutsui, C. Durfee, et al.
VLSI Technology 2018
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
G. Tsutsui, C. Durfee, et al.
VLSI Technology 2018
Ning Li, Kevin Han, et al.
Advanced Materials
Leonardo Massai, Bence Hetényi, et al.
Communications Materials
Fengnian Xia, Thomas Mueller, et al.
LEOS 2008