Steven E. Laux, M.V. Fischetti
IEEE Electron Device Letters
A compact model is proposed to evaluate the tunneling current across the insulator of metal-oxide-semiconductor structures. The model is based on a questionable approximation for the 'transparency factor'. It was shown that the argument brought forward to explain the negligible effect of the image-induced barrier-lowering ignores simple concepts of electrostatics.
Steven E. Laux, M.V. Fischetti
IEEE Electron Device Letters
M.V. Fischetti, S.E. Laux
Journal of Applied Physics
M.V. Fischetti, B. Riccó
Journal of Applied Physics
D.C. Cole, E.M. Buturla, et al.
Solid State Electronics