Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.
T.N. Morgan
Semiconductor Science and Technology
A. Gangulee, F.M. D'Heurle
Thin Solid Films
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Ellen J. Yoffa, David Adler
Physical Review B