P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructures
Abstract
The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.
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