Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Paper
Contact for shallow junctions
Abstract
A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated. © 1986.
Related
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Mark W. Dowley
Solid State Communications
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules