PaperLattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
Conference paperDegradation of GaAs and Ga1-xAlxAs light emitting diodesJ.M. Blum, K. Konnerth, et al.IRPS 1970
PaperAbsence of Fermi level pinning at metal-InxGa1-xAs(100) interfacesL.J. Brillson, M.L. Slade, et al.Applied Physics Letters