PaperEffect of iso-electronic dopants on the dislocation density of GaAsG.M. Blom, J. WoodallJournal of Electronic Materials
PaperSpontaneous and stimulated emission from gaas diodes with three-layer structuresM.H. Pilkuhn, H. RupprechtJournal of Applied Physics
PaperHigh-efficiency Ga1-xAlxAsSingle Bond signGaAs solar cellsJ. Woodall, H.J. HovelApplied Physics Letters
PaperDiffusion of Zn into GaAs under the presence of excess arsenic vaporH. Rupprecht, C.Z. LemayJournal of Applied Physics
