Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Heavily doped polycrystalline thin diamond films were prepared by chemical vapor deposition. Boron was introduced in the films during the deposition. The electrical activity of acceptors was studied using dc polarization technique and bulk admittance spectroscopy. In the concentration range of 1017–1020cm-3 we have observed the occurrence of Hubbard interaction and band splitting. The conductivity of the films is mobility limited, and the pre-exponential factor of σ(T) decreases as the total concentration of boron increases. The occurrence of boron-defect clustering has been detected, and its effect on the majority-carrier injection level is discussed. © 1991, The Electrochemical Society, Inc. All rights reserved.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
David B. Mitzi
Journal of Materials Chemistry
John G. Long, Peter C. Searson, et al.
JES