Jonathan Z. Sun, Barbaros Özyilmaz, et al.
Journal of Applied Physics
Bit error rates below 10-11 are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy. Tests were performed at wafer level, and error-free operation was achieved with 10 ns write pulses for all nondefective bits during a 66-h test. Yield in the 4-kb array was limited to 99% by the presence of defective cells. Test results for both a 4-kb array and individual devices are consistent and predict practically error-free operation at room temperature. © 2011 IEEE.
Jonathan Z. Sun, Barbaros Özyilmaz, et al.
Journal of Applied Physics
Christopher Safranski, Jan Kaiser, et al.
Nano Letters
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions
R.B. Laibowitz, R.P. Robertazzi, et al.
Physical Review B