Conference paper
Big data techniques for industrial problems with little data
Elham Khabiri, Bhavna Agrawal, et al.
Big Data 2022
Paper
Device parameter optimization for reduced short channel effects in retrograde doping MOSFET
Abstract
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects. © 1996 IEEE.