Endurance improvement of Ge2Sb2Te5-based phase change memory
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009
The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0.7Sr0.3TiO3 thin films can be understood in terms of a power law dependence known as the Curie-von Schweidler law. The small dispersion (less than 7% decrease in capacitance from 1 mHz to 20 GHz) and low loss (loss angle less than 0.006 at 20 GHz) measured in Ba0.7Sr0.3TiO3 thin films indicate that these films are applicable to device application up to at least K band. © 1998 American Institute of Physics.
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009
R.B. Laibowitz, R.P. Robertazzi, et al.
Physical Review B
P. Chaudhari, R.T. Collins, et al.
Physical Review B
X.-H. Liu, M.W. Lane, et al.
Int. J. Solids Struct.