Distortion of masks for x-ray lithography

R.E. Acosta; J.R. Maldonado; R. Fair; R. Viswanathan; A.D. Wilson

doi:10.1016/0167-9317(85)90076-0

Microelectronic Engineering

Paper

01 Jan 1985

Distortion of masks for x-ray lithography

View publication

Abstract

Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates. © 1985.

Paper

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Dipanjan Gope, Albert E. Ruehli, et al.

IEEE T-MTT

Paper

Quantum properties of surface space-charge layerss

Frank Stem

C R C Critical Reviews in Solid State Sciences

Paper

Ab initio molecular dynamics simulation of liquids and solutions

Michiel Sprik

Journal of Physics Condensed Matter

Paper

Crystal structure and cation distribution of MnCrInS₄ from synchrotron powder diffraction data

G. Will, N. Masciocchi, et al.

Zeitschrift fur Kristallographie - New Crystal Structures

View all publications

Abstract

Related

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Quantum properties of surface space-charge layerss

Ab initio molecular dynamics simulation of liquids and solutions

Crystal structure and cation distribution of MnCrInS4 from synchrotron powder diffraction data

Crystal structure and cation distribution of MnCrInS₄ from synchrotron powder diffraction data