W. Robertson, G.V. Kopcsay, et al.
IEEE Microwave and Guided Wave Letters
We demonstrate a novel technique for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. We have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time. © 1991 IEEE
W. Robertson, G.V. Kopcsay, et al.
IEEE Microwave and Guided Wave Letters
Y. Pastol, G. Arjavalingam, et al.
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