A. Gangulee, F.M. D'Heurle
Thin Solid Films
It has been known that silicon atoms can diffuse out through a gold film and accumulate on the top surface at low temperatures. To investigate the effect of this phenomenon on the silicide formation kinetics, a gold layer was deposited between a platinum layer and a silicon layer. After annealing, the progress of silicide formation was probed with Rutherford backscattering spectrometry. It was found that the PtSi formation rate is greatly enhanced by a gold film while the Pt2Si formation rate shows little changes. These are explained in terms of different dominant diffusing species during the formation of silicides. © 1987, American Vacuum Society. All rights reserved.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989