L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Conference paper
EFFECTS OF MeV IMPLANTATION ON THE CHARACTERISTICS OF p-n JUNCTIONS.
Abstract
The authors studied the effects of MeV phosphorous implantation and subsequent process steps on the electrical characteristics of p-n junctions. The observed forward and reverse I-V characteristics can be explained by the spatially localized defects induced by the high-energy implantation. The device characteristics are affected only when the depletion layer reaches the damaged region.
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