PaperIVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During AnnealingJ. Woodall, H. Rupprecht, et al.IEEE T-ED
PaperAn isothermal etchback-regrowth method for high-efficiency Ga 1-xAlxAs-GaAs solar cellsJ. Woodall, H.J. HovelApplied Physics Letters
PaperScanning tunneling microscopy and spectroscopy of arsenic antisite defects in GaAsR.M. Feenstra, J. Woodall, et al.ICDS 1993
PaperProcessing and reconstruction effects on Al-GaAs(100) barrier heightsI.M. Vitomirov, A. Raisanen, et al.Journal of Electronic Materials
