F.R. McFeely, K.Z. Zhang, et al.
MRS Fall Meeting 1996
Using electrochemical oxidation as a probe technique for the mechanisms by which oxidation occurs in c-axis La2CuO4 films, the vital role played by specific through-film microstructural defects has been observed using transmission electron microscopy. These defects are namely the large through-film precipitates sometimes found in these films and {111} planar faults. Two high-oxygen-content phases are formed; one locally and with a superstructure, the other of reduced orthorhombicity and larger c-axis than as-grown material. Some films were found not to oxidize, and the defects in these films were compared with those in the oxidizable films.
F.R. McFeely, K.Z. Zhang, et al.
MRS Fall Meeting 1996
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011