S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Ronald Troutman
Synthetic Metals
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011