Energy level of the nitrogen dangling bond in amorphous silicon nitride

W.L. Warren; Jerzy Kanicki; J. Robertson; P. Lenahan

doi:10.1063/1.106222

Applied Physics Letters

Paper

01 Dec 1991

Energy level of the nitrogen dangling bond in amorphous silicon nitride

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Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Paper

Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors

Frank R. Libsch, Jerzy Kanicki

Applied Physics Letters

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Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride

Jerzy Kanicki, S. Hug

Applied Physics Letters

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Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films

W.L. Warren, Jerzy Kanicki, et al.

Journal of Applied Physics

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Electron spin resonance spectroscopy of defects in low temperature dielectric films

D. Jousse, Jerzy Kanicki, et al.

Proceedings of SPIE 1989

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Abstract

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Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors

Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride

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