Energy level of the nitrogen dangling bond in amorphous silicon nitride

W.L. Warren; Jerzy Kanicki; J. Robertson; P. Lenahan

doi:10.1063/1.106222

Applied Physics Letters

Paper

01 Dec 1991

Energy level of the nitrogen dangling bond in amorphous silicon nitride

View publication

Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Conference paper

Paramagnetic nitrogen defects in silicon nitride

W.L. Warren, Jerzy Kanicki, et al.

MRS Proceedings 1992

Paper

Investigation of the plasma deposited silicon dioxide on hydrogenated amorphous silicon interface by capacitance measurements

A. Gelatos, Peter Wagner, et al.

Journal of Non-Crystalline Solids

Paper

Spatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride

Jerzy Kanicki, D. Jousse

IEEE Electron Device Letters

Conference paper

AMORPHOUS HYDROGENATED SILICON SOLAR CELLS WITH THE HOMOGENEOUS CHEMICAL VAPOR DEPOSITION TECHNIQUE.

J.F. Nijs, Jerzy Kanicki, et al.

E. C. Photovoltaic Solar Energy Conference 1983

View all publications

Abstract

Related

Paramagnetic nitrogen defects in silicon nitride

Investigation of the plasma deposited silicon dioxide on hydrogenated amorphous silicon interface by capacitance measurements

Spatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride

AMORPHOUS HYDROGENATED SILICON SOLAR CELLS WITH THE HOMOGENEOUS CHEMICAL VAPOR DEPOSITION TECHNIQUE.