Ming L. Yu, B.S. Meyerson
JVSTA
Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE
Ming L. Yu, B.S. Meyerson
JVSTA
E.F. Crabbé, D.L. Harame, et al.
IEEE T-ED
T.N. Jackson, S. Nelson, et al.
Device Research Conference 1993
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters