Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Stresses and radiation damage in Ar⁺ and Ti⁺ ion-implanted silicon

P.B. Madakson, J. Angilello

Journal of Applied Physics

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The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga-Al-As System

M.B. Small, R. Ghez, et al.

JES

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Effect of doping on degradation of GaAsSingle Bond signAl_x Ga_1-xAs injection lasers

P.G. McMullin, J.M. Blum, et al.

Applied Physics Letters

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Lanthanide gallate perovskite-type substrates for epitaxial, high-T_c superconducting Ba₂YCu₃O_7-δ films

E.A. Giess, R.L. Sandstrom, et al.

IBM J. Res. Dev

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Abstract

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