Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

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Flash X-ray microscopy

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Science

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Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?

B. Monemar, R.M. Potemski, et al.

Physical Review Letters

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High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment

Richard A. Kiehl, P.E. Hallali, et al.

IEEE Electron Device Letters

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Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CH_xl_4-x, HI, and l₂

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Journal of Electronic Materials

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Abstract

Related

Flash X-ray microscopy

Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?

High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment

Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

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