S.J. Wind, M. Radosavljević, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Very high-transconductance 0.1-um surface-channel opMOSFET devices are fabricated with p+-poly gate on 35-A-thick gate oxide. A 600-A-deep p + source-drain extension is used with self-aligned TiSi2to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices. © 1993 IEEE
S.J. Wind, M. Radosavljević, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S.J. Wind, L.T. Shi, et al.
IEDM 1999
S.J. Wind, J. Appenzeller, et al.
Applied Physics Letters
P. Santhanam, C.C. Chi, et al.
Physical Review Letters