Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have determined energy-band dispersions and lifetimes for occupied and empty bands along the threefold axis of Ru using angle-resolved photoelectron spectroscopy with synchrotron radiation. The lowest valence band extends from - 7.5 eV below the Fermi energy at 1+ to - 5.6 eV at 4- with an inverse lifetime of 1.2 eV. There is a band gap between - 5.5 and - 2.8 eV. The t2g-like and eg-like points are at - 2.4 eV 6-,1+) and at - 0.3 eV (6+), respectively. A 5, 6 symmetry gap extends from - 1.7 to - 0.5 eV. A comparison with band calculations is given. © 1981 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
K.N. Tu
Materials Science and Engineering: A
Lawrence Suchow, Norman R. Stemple
JES