Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well. For T [110] we have observed a red shift of several peaks and an increase in the intensities of several symmetry-forbidden transitions; effects not seen for T [100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T [110]. © 1991 The American Physical Society.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
T.N. Morgan
Semiconductor Science and Technology
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications