Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Fully functional 512Kb static-random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal oxide semiconductor (CMOS) technology using compact storage ring X-ray lithography thus demonstrating the functionality of the X-ray lithography infrastructure. A lithographic performance comparison was made between x-ray lithography and optical (excimer laser) lithography by fabricating SRAM devices using both lithographic techniques. The excellent process latitude and dimension control available for x-ray lithography is reflected in this comparison. A comprehensive discussion of the advantages of x-ray lithography is discussed in this paper. © 1994.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures