J.E.E. Baglin, G.J. Clark
Nuclear Inst. and Methods in Physics Research, B
In this paper, the effects of irradiation of Ge-doped FHD silica with 2 MeV Ar+ ions were optically characterized using an m-line technique based on grating couplers. An increase of refractive index as high as 1.2×10-2 was obtained, larger than the values normally reported for UV or electron-beam irradiation of the same material (typically of ≈10-3). Thermal annealing has been carried out and an activation energy of 0.36 eV for the recovery of the refractive index has been estimated, suggesting that a bond rearrangement mechanism could be responsible for the change in refractive index. © 2003 Elsevier Science B.V. All rights reserved.
J.E.E. Baglin, G.J. Clark
Nuclear Inst. and Methods in Physics Research, B
J.E.E. Baglin, J. Dempsey, et al.
Journal of Electronic Materials
Katayun Barmak, Jr. Cabral, et al.
Journal of Materials Research
M.J. Carey, A.J. Kellock, et al.
Applied Physics Letters