P. Alnot, D.J. Auerbach, et al.
Surface Science
Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the E41 center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Ronald Troutman
Synthetic Metals
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Imran Nasim, Melanie Weber
SCML 2024