J.C. Marinace
JES
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As heterostructures. © 1986 The American Physical Society.
J.C. Marinace
JES
Ronald Troutman
Synthetic Metals
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP