Ming L. Yu
Physical Review B
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As heterostructures. © 1986 The American Physical Society.
Ming L. Yu
Physical Review B
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