P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
Abstract
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si
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