Thomas M. Cheng
IT Professional
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.
Thomas M. Cheng
IT Professional
Sai Zeng, Angran Xiao, et al.
CAD Computer Aided Design
Oliver Bodemer
IBM J. Res. Dev
David S. Kung
DAC 1998