Conference paper
Impact of substrate bias on GIDL for thin-BOX ETSOI devices
Pranita Kulkarni, Q. Liu, et al.
SISPAD 2011
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.
Pranita Kulkarni, Q. Liu, et al.
SISPAD 2011
Miaomiao Wang, Pranita Kulkarni, et al.
IRPS 2010
Davood Shahrjerdi, Stephen W. Bedell, et al.
Solid-State Electronics
Dimitri A. Antoniadis, Ali Khakifirooz
IEDM 2008