Conference paper
(Invited) FinFET technology
Kangguo Cheng
ECS Meeting 2017
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.
Kangguo Cheng
ECS Meeting 2017
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Circuits 2011
E. Augendre, S. Maitrejean, et al.
S3S 2015
Pouya Hashemi, Karthik Balakrishnan, et al.
IEDM 2014