D.D. Awschalom, J. Warnock, et al.
Physical Review Letters
The GaAs-GaAlAs graded-index separate confinement heterostructure was grown selectively by molecular beam epitaxy on a SiO2-masked GaAs (100) substrate. The stripe windows on the SiO2 mask were 10 μm in width and were oriented along [011̄] direction. The laser diodes thus fabricated lased in a single longitudinal mode with a side mode suppression ratio of 95:1. Both the longitudinal mode and the single-lobe far-field pattern were stable up to 4Ith.
D.D. Awschalom, J. Warnock, et al.
Physical Review Letters
A. Alexandrou, M.M. Dignam, et al.
Physical Review B
E. Deleporte, G. Peter, et al.
Surface Science
W. Hansen, T.P. Smith, et al.
Physical Review Letters