O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
For heterogeneous integration of IIIV compound materials on 200 mm Si wafers, we present a complete in-situ molecular beam epitaxy (MBE) process from a Ge strain compensating buffer on Si to GaAs heteroepitaxy. The whole growth process, including high-k gate oxide deposition, is performed in a 200 mm MBE cluster tool. Thin (≤0.3 μm), temperature-graded Ge buffers are investigated and the influence of the substrate temperature during Ge nucleation and anneals is studied. Using such a buffer, GaAs was grown on 200 mm Si wafers and characterized structurally and electrically using MOS capacitors. © 2010 Elsevier B.V. All rights reserved.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
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Physica A: Statistical Mechanics and its Applications
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Surface Science
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Microelectronic Engineering