L. Esaki, P.J. Stiles
Physical Review Letters
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
L. Esaki, P.J. Stiles
Physical Review Letters
L. Esaki, L.L. Chang
Physical Review Letters
S. Washburn, R.A. Webb, et al.
International Conference on Low Temperature Physics (LT) 1983
H. Bluyssen, J.C. Maan, et al.
Solid State Communications