Conference paper
Magnetic manifestations of carrier localization in quantum well
D.D. Awschalom, J. Warnock, et al.
QELS 1989
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
D.D. Awschalom, J. Warnock, et al.
QELS 1989
L.L. Chang, N. Kawai, et al.
Applied Physics Letters
G.A. Sai-Halasz, A. Pinczuk, et al.
Solid State Communications
L.L. Chang
NATO Advanced Study Institute 1984