J. Tersoff
Applied Physics Letters
Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzmann-like distribution of local geometries, corresponding to a "glass temperature" of roughly 700 K. The resulting tetrahedral network exhibits native defects, threefold- and fivefold-coordinated atoms, which have mean formation energies of 0.6 and 0.3 eV, respectively, and which are apparently mobile even at fairly low temperatures. These results are obtained by a novel approach to the analysis, and are relatively insensitive to the empirical interatomic potential used in the simulations. © 1988 The American Physical Society.
J. Tersoff
Applied Physics Letters
Vasili Perebeinos, J. Tersoff, et al.
Physical Review Letters
François Léonard, J. Tersoff
Physical Review Letters
J. Tersoff, A.W. Denier Van Der Gon, et al.
Physical Review Letters