Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Grain growth in vapor-deposited 81 at.% Ni+19 at.% Fe thin films 200 and 400 Å thick in the temperature range 350°-450°C has been investigated by transmission electron microscopy. The results have been interpreted in terms of a previously published model of grain growth in thin films on substrates. The activation energy for grain growth in this alloy has been determined as 1.7±0.2 eV. © 1974.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R. Ghez, M.B. Small
JES
K.N. Tu
Materials Science and Engineering: A
Julien Autebert, Aditya Kashyap, et al.
Langmuir