Grazing angle optical emission interferometry for end-point detection

David Angell; Gottlieb S. Oehrlein

doi:10.1063/1.104701

Applied Physics Letters

Paper

01 Dec 1991

Grazing angle optical emission interferometry for end-point detection

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Abstract

Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.

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Fluorocarbon high density plasmas. VII. Investigation of selective SiO₂-to-Si₃N₄ high density plasma etch processes

Ying Zhang, Gottlieb S. Oehrlein, et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Competitive reactions of fluorine and oxygen with W, WSi2, and Si surfaces in reactive ion etching using CF4/O2

Gottlieb S. Oehrlein, J. Lennart Lindsöm

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Fluorocarbon assisted atomic layer etching of SiO₂ and Si using cyclic Ar/C₄F₈ and Ar/CHF₃ plasma

Dominik Metzler, Chen Li, et al.

JVSTA

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Tungsten etching mechanisms in CF₄/O₂ reactive ion etching plasmas

Tim D. Bestwick, Gottlieb S. Oehrlein

Journal of Applied Physics

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Abstract

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