G.M. Cohen, C. Cabral Jr., et al.
MRS Proceedings 2002
When linear voltage ramps were applied to MOS capacitors, the current-vs-voltage (I-V) curves indicated a region of quasisaturation of current, i.e., a ledge in the I-V characteristic. These ledges could be explained by an electron-trapping model. Trap cross sections and concentrations were dependent on sample processing and oxide thickness and were in the 10 -19 cm2 and 1012 cm-2 ranges, respectively. Comparison of shifts in the I-V and C-V curves showed that trapped charge to be within about 10 Å of the Si-SiO2 interface.
G.M. Cohen, C. Cabral Jr., et al.
MRS Proceedings 2002
P. Solomon
Applied Physics Letters
M.I. Nathan, P.M. Mooney, et al.
Surface Science
H.-S. Wong, David J. Franks, et al.
IEDM 1998