E. Burstein
Ferroelectrics
This paper presents high-Q and high-inductance-density on-chip inductors fabricated on high-resistivity substrate (HRS) using a 0.12 μm SOI CMOS technology with 8 copper metal layers. A peak Q of 52 is obtained at 5 GHz for a 0.6 nH STP (Single-turn, multiple metal levels in Parallel) inductor. An inductance density of 5302 fH/μm2 is obtained for a 42 nH MTS (Multi-turn, multiple metal layers in Series) inductor.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals