Low-Resource Speech Recognition of 500-Word Vocabularies
Sabine Deligne, Ellen Eide, et al.
INTERSPEECH - Eurospeech 2001
Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)-√3 × √3R30°-Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers. © 2011 by International Business Machines Corporation.
Sabine Deligne, Ellen Eide, et al.
INTERSPEECH - Eurospeech 2001
Pradip Bose
VTS 1998
S.M. Sadjadi, S. Chen, et al.
TAPIA 2009
Xiaozhu Kang, Hui Zhang, et al.
ICWS 2008