Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface

E. Cartier; D.J. DiMaria

doi:10.1016/0167-9317(93)90158-2

Microelectronic Engineering

Paper

01 Jan 1993

Hot-electron dynamics in SiO₂ and the degradation of the Si/SiO₂-interface

View publication

Abstract

Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.

Paper

Designing catalysts with deep generative models and computational data. A case study for Suzuki cross coupling reactions

Oliver Schilter, Alain Vaucher, et al.

Digital Discovery

Paper

Catalyst chelation effects in organocatalyzed ring-opening polymerization of lactide

Daniel J. Coady, Amanda C. Engler, et al.

ACS Macro Letters

Paper

Nanowires on stepped metal surfaces

F.J. Himpsel, T.A. Jung, et al.

Surface Review and Letters

Paper

Interface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficient

R. Ghez, J.S. Lew

Journal of Crystal Growth

View all publications

Abstract

Related

Designing catalysts with deep generative models and computational data. A case study for Suzuki cross coupling reactions

Catalyst chelation effects in organocatalyzed ring-opening polymerization of lactide

Nanowires on stepped metal surfaces

Interface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficient