M.W. Shafer, R.A. de Groot, et al.
Materials Research Bulletin
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
M.W. Shafer, R.A. de Groot, et al.
Materials Research Bulletin
J.C. Tsang, G.S. Oehrlein, et al.
Applied Physics Letters
A.D. Marwick, G.S. Oehrlein, et al.
Applied Physics Letters
N.R. Taskar, I.B. Bhat, et al.
Journal of Crystal Growth