S.W. Robey, G.S. Oehrlein
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
S.W. Robey, G.S. Oehrlein
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
B. Jagannathan, M. Khater, et al.
IEEE Electron Device Letters
D. Ahlgren, M.M. Gilbert, et al.
IEDM 1996
M.S. Goorsky, T.F. Kuech, et al.
Applied Physics Letters