PaperEffect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layersB. Laikhtman, M. Heiblum, et al.Applied Physics Letters
Conference paperNEW MICROWAVE INDUCED RESONANCES IN THE CONDUCTANCE OF A GaAs/Ga//1// minus //xAl//xAs HETEROJUNCTION.E.J. Pakulis, F. Fang, et al.ICPS Physics of Semiconductors 1984
PaperTemperature dependence of the electron mobility in GaAs-GaAlAs heterostructuresE. Mendez, P.J. Price, et al.Applied Physics Letters
