Peter W. Cook, Dale L. Critchlow, et al.
IEEE JSSC
The n-channel insulated-gate field-effect transistor offers a factor of 2 to 3.4 mobility advantage (depending on crystal orientation and substrate doping level) over p-channel devices. In addition, several advantages result from the fact that the work function difference between an aluminum gate and the silicon substrate is about —0.8 volt for a p substrate compared with about zero for an n substrate. In particular, this results in a low threshold voltage that allows the use of a substrate bias to adjust the threshold voltage over a useful design range resulting in 1) an added flexibility in choice of thresholds and substrate doping, 2) a reduction in the effect of source-substrate bias on device threshold, 3) decreased junction capacitance, and 4) larger parasitic thick-oxide thresholds for a given insulator thickness. The speed, power, and density advantages of the n-channel device are illustrated for logic and memory circuits using representative n-and p-channel device designs. Copyright © 1969 by The Instrtute of Electrical and Electronics Engineers, Inc.
Peter W. Cook, Dale L. Critchlow, et al.
IEEE JSSC
Robert H. Dennard, Fritz H. Gaensslen, et al.
IEEE JSSC
Tak H. Ning, Peter W. Cook, et al.
IEEE T-ED
Wing K. Luk, Robert H. Dennard
VLSI Circuits 2004