PaperThe Implementation of a Reduced-Field Profile Design for High-Performance Bipolar TransistorsPong-Fei Lu, James H. Comfort, et al.IEEE Electron Device Letters
PaperShubnikov-de Haas oscillations under hot-electron conditions in Si/Si1-xGex heterostructuresG. Stöger, G. Brunthaler, et al.Physical Review B
PaperIIA-3 113-GHz fT Graded-Base SiGe HBT'sE.F. Crabbé, B.S. Meyerson, et al.IEEE Transactions on Electron Devices
PaperSi/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog ApplicationsD.L. Harame, J.H. Comfort, et al.IEEE Transactions on Electron Devices
