PaperOrigin of]] residual" persistent photoconductivity in selectively doped GaAs/AlxGa1-xAs heterojunctionsT.N. Theis, S.L. WrightApplied Physics Letters
Conference paperBonding of thin films on 200 mm silicon wafers using chemical mechanical polishingE.C. Jones, S. Tiwari, et al.IEEE International SOI Conference 1998
PaperResonant indirect Fowler-Nordheim tunneling in Al0.8Ga 0.2As barrierS.S. Lu, K. Lee, et al.Applied Physics Letters
PaperAbsence of Fermi level pinning at metal-InxGa1-xAs(100) interfacesL.J. Brillson, M.L. Slade, et al.Applied Physics Letters
