PaperFQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fieldsR.B. Dunford, R. Newbury, et al.Solid State Communications
PaperElectron transport properties of Si/SiGe heterostructures: Measurements and device implicationsK. Ismail, S. Nelson, et al.Applied Physics Letters
PaperHigh-speed Germanium-on-SOI lateral PIN photodiodesG. Dehlinger, S.J. Koester, et al.IEEE Photonics Technology Letters
Conference paperHigh mobility strained Ge / SiGe PMOSFETs for high performance CMOSHuiling Shang, J.O. Chu, et al.ECS Meeting 2006