Can Bayram, Devendra K. Sadana, et al.
SPIE OPTO 2012
Obtaining heavily-doped n-type germanium (Ge) is difficult since n-type dopant activation in Ge is limited to less than 5× 1019 cm -3 which is far below the solid solubility limit of phosphorus (P) in Ge. Such poor activation has limited the rectifying properties of n +/p Ge diodes. This work is aimed at understanding the challenge of forming highly rectifying n+ /p diode as well as enhancing rectification of n+ /p diode by using antimony (Sb) and P coimplantation process. Enhanced n+ doping of greater than 10 20 cm-3 in Ge obtained by Sb/P codoping results in enhanced rectification in Ge n+ /p junction diode. © 2011 American Institute of Physics.
Can Bayram, Devendra K. Sadana, et al.
SPIE OPTO 2012
Katherine L. Saenger, Stephen W. Bedell, et al.
MRS Spring Meeting 2008
Jeehwan Kim, Hongsik Park, et al.
Science
Alexandre Acovic, Devendra K. Sadana, et al.
IEEE Electron Device Letters