Kai Shum, P.M. Mooney, et al.
Physical Review B - CMMP
In this letter, we present results of enhancement and depletion mode transistors fabricated on the same layer structure of Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a pn-junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 327 mS/mm and 417 mS/mm has been achieved in 0.5-μm gate length depletion and enhancement-mode transistors, respectively.
Kai Shum, P.M. Mooney, et al.
Physical Review B - CMMP
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
K.A. Slinker, K.L.M. Lewis, et al.
New Journal of Physics
K. Ismail, S. Nelson, et al.
Applied Physics Letters