F.B. Kaufman, S. Cohen, et al.
MRS Spring Meeting 1995
Paper
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
Abstract
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100°C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550°C is consistent with this result.
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