O. Thomas, P. Gas, et al.
Journal of Applied Physics
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100°C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550°C is consistent with this result.
O. Thomas, P. Gas, et al.
Journal of Applied Physics
Z.A. Weinberg, V.R. Deline, et al.
Applied Physics Letters
S.J. Wind, Y. Taur, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A. Zaslavsky, D.A. Grützmacher, et al.
Applied Physics Letters