S.J. Bending, C. Zhang, et al.
Physical Review B
We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
S.J. Bending, C. Zhang, et al.
Physical Review B
C. Rossel, P. Guéret, et al.
Journal of Applied Physics
C. Andersson, C. Rossel, et al.
Microelectronic Engineering
H. Schwer, J. Karpinski, et al.
Physica C: Superconductivity and its Applications