P. Voisin, C. Delalande, et al.
Physical Review B
We show that the Rutherford backscattering yield from [100] InAs-GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs-GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga-As or In-Sb bonds, which differ by 7% in binding distance from InAs-GaSb.
P. Voisin, C. Delalande, et al.
Physical Review B
E. Rimini, W.K. Chu, et al.
Journal of Applied Physics
Y. Taur, S. Cohen, et al.
IEDM 1992
W.K. Chu, M. Numan, et al.
Nuclear Inst. and Methods in Physics Research, B